Electrical Properties of Polyimide Langmuir-Blodgett Films a…
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- DOI 10.5188/jsmerj.2.65
- OpenAlex ID W2322108557
- Type Article
- Language EN
- Published 01 Jan 1989
- Volume 2 (1)
- Pages 65–72
- Source Journal of the Society of Materials Engi…
- Publisher Akita University
- Countries 1
- Institutions 1
- Added 10 Oct 2025
- Updated 23 Sep 2026
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Electrical Properties of Polyimide Langmuir-Blodgett Films and fabrication of tunnel junctions
Article 1989 EN Diamond
Thermally stable multilayer films of polyimide were prepared on noble metal base electrodes by using the Langmuir-Blodgett technique. Here, the monolayer thickness of the multilayer polyimide Langmuir-Blodgett films was about 0.4 nm. We have examined the electrical properties of Au/PI/Au and Au/PI/Pb-Bi tunnel junctions.For Au/PI/Au junctions, it was found that we could get ultrathin polyimide Lan…
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3 authors| # | Author | Institutions | ORCID |
|---|---|---|---|
| 1 | Mitsumasa Iwamoto | Tokyo Institute of Technology (JP) | |
| 2 | Tohru Kubota | Tokyo Institute of Technology (JP) | — |
| 3 | Matsuo Sekine | Tokyo Institute of Technology (JP) | — |
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