Atomic-Scale Simulations of Early Stage of Oxidation of Vici…
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- DOI 10.7567/jjap.50.10pf01
- OpenAlex ID W4247828839
- Type Article
- Language EN
- Published 01 Oct 2011
- Volume 50 (10S)
- Pages 10PF01
- Source Japanese Journal of Applied Physics
- Publisher Institute of Physics
- Countries 1
- Institutions 1
- Added 10 Oct 2025
- Updated 21 Aug 2026
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Atomic-Scale Simulations of Early Stage of Oxidation of Vicinal Si(001) Surfaces Using a Reactive Force-Field Potentials
Article 2011 EN
Atomic-Scale Simulations of Early Stage of Oxidation of Vicinal Si(001) Surfaces Using a Reactive Force-Field Potentials, Yun, Kyung-Han, Hwang, Yubin, Choi, Heechae, Lee, Eung-Kwan, Yoon, Geunsup, Kim, Byung-Hyun, Chung, Yong-Chae
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7 authors| # | Author | Institutions | ORCID |
|---|---|---|---|
| 1 | Kyung‐Han Yun | Hanyang University (KR) | — |
| 2 | Yubin Hwang | Hanyang University (KR) | — |
| 3 | Heechae Choi | Hanyang University (KR) | |
| 4 | Eung-Kwan Lee | Hanyang University (KR) | — |
| 5 | Geunsup Yoon | Hanyang University (KR) | — |
| 6 | Byung‐Hyun Kim | Hanyang University (KR) | |
| 7 | Yong‐Chae Chung | Hanyang University (KR) |
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